دیتاشیت IXTP3N120
مشخصات دیتاشیت
| نام دیتاشیت |
IXT(A,P)3N120
|
| حجم فایل |
179.8
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Littelfuse/IXYS IXTP3N120
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
200W
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Total Gate Charge (Qg@Vgs):
42nC@10V
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Drain Source Voltage (Vdss):
1.2kV
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Input Capacitance (Ciss@Vds):
1350pF@25V
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Continuous Drain Current (Id):
3A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
4.5Ω@10V,1.5A
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Package:
TO-220
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Manufacturer:
IXYS
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Series:
HiPerFET™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
1200V
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Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
4.5Ohm @ 500mA, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
42nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1350pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
200W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220AB
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Package / Case:
TO-220-3
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detail:
N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-220AB
